NITRIDE-BASED SEMICONDUCTOR DEVICE USING GATE-ALL-AROUND STRUCTURE AND METHOD THEREOF

摘要

The present invention relates to a method to manufacture a nitride semiconductor having an all-around-gate structure. The method includes a step of forming a nano-sized fin on a first nitride semiconductor film; a step of forming a protection insulating film on the circumference of the fin by etching a border part and an upper part of the insulating film after the deposition of the insulating film on the fin; a step of exposing a lower part of the fin to the outside without the protection insulating film by etching the first nitride semiconductor film; a step of forming a nanowire, isolated from the substrate by etching the lower part of the exposed fin; and a step of forming a gate electrode at the circumference of the nanowire. According to the present invention, the gate-all-around structure has a three-dimensional channel area so has an excellent element property. A normally-off characteristics are formed in the nitride semiconductor in order to be applied to a high frequency element and a high output power element.