| 摘要 |
Disclosed is a method for manufacturing a TFT substrate (20), said method including: a step for forming an oxide semiconductor layer (140) above a substrate (110); a step for forming a first oxide film (151) on the oxide semiconductor layer (140); a step for performing oxidation treatment with respect to the oxide semiconductor layer (140) after forming the first oxide film (151); and a step for forming a second oxide film (152) on the first oxide film (151) after performing the oxidation treatment. |
