Method for producing a graphene sheet on a platinum silicide, structures obtained using said method and uses thereof

摘要

The invention relates to a method for producing a graphene sheet on a platinum silicide, wherein the platinum silicide is in the form of a layer or a plurality of pins.;This method comprises:
a) producing a stack by (i) depositing a layer C1 of a diffusion barrier material on a substrate; (ii) depositing, on the layer C1, a layer C2 of a carbon-containing material, wherein said carbon-containing material optionally comprises silicon; (iii) depositing, on the layer C2, a layer C3 of platinum; (iv) depositing a layer C4 of a material of formula SiaCbHc on the layer C3 if the carbon-containing material of the layer C2 is free from silicon; andb) heat-treating the stack obtained at step a).;It also relates to structures obtained using this method and the uses of these structures.;Applications: manufacture of micro- and nanoelectronic devices, micro- and nanoelectromechanical devices, etc.

主权项

1. A method for producing a structure comprising:
a substrate; a layer C1 of a diffusion barrier material covering the substrate; a platinum silicide covering the layer C1, the platinum silicide being of formula PtxSi where x is a number greater than or equal to two, and being in a form of a layer or spaced pins; and a graphene sheet covering the layer or spaced pins of the platinum silicide; the method comprising: a) producing a stack by:
i) depositing the layer C1 on the substrate;ii) depositing, on the layer C1, a layer C2 of a carbon-containing material free from silicon;iii) depositing, on the layer C2, a layer C3 of platinum;iv) depositing, on the layer C3, a layer C4 of a material of formula SiaCbHc wherein a is greater than 0 whereas b and c, which are identical or different, are greater than or equal to 0, a ratio of a number of platinum atoms found in the layer C3 with respect to a number of silicon atoms found in the layer C4 being greater than or equal to two; and b) heat-treating the stack obtained at a) so as to obtain the structure.