METHODS FOR FABRICATING INTEGRATED CIRCUITS WITH IMPROVED IMPLANTATION PROCESSES

摘要

Methods for fabricating integrated circuits are provided. In an embodiment, a method for fabricating an integrated circuit includes providing a structure having an n-channel gate stack and a p-channel gate stack formed over a semiconductor substrate. The method includes forming halo implant regions in the semiconductor substrate adjacent the p-channel gate stack and forming extension implant regions in the semiconductor substrate adjacent the p-channel gate stack. The method further includes annealing the halo implant regions and the extension implant regions in the semiconductor substrate adjacent the p-channel gate stack by performing a laser anneal process. Also, the method forms extension implant regions in the semiconductor substrate adjacent the n-channel gate stack.

主权项

1. A method for fabricating an integrated circuit, the method comprising:
providing a structure having an n-channel gate stack and a p-channel gate stack formed over a semiconductor substrate; forming halo implant regions in the semiconductor substrate adjacent the p-channel gate stack; forming extension implant regions in the semiconductor substrate adjacent the p-channel gate stack; annealing the halo implant regions and the extension implant regions in the semiconductor substrate adjacent the p-channel gate stack by performing a laser anneal process; and forming extension implant regions in the semiconductor substrate adjacent the n-channel gate stack.