发明名称 |
Etching bias reduction |
摘要 |
A patterning device for implementing a pattern on a substrate includes a main pattern feature and a sacrificial pattern feature. Both the main pattern feature and the sacrificial pattern feature are transferable to an overlying layer on the substrate. The sacrificial pattern feature is positioned a distance from the main pattern feature and is configured to have a dimension less than an etching bias of an etching process. The etching process is capable of transferring the main pattern feature to an underlying layer, such that the sacrificial pattern feature adjusts an etching behavior of the main pattern feature and is eliminated from the underlying layer.
|
申请公布号 |
US2007087571(A1) |
申请公布日期 |
2007.04.19 |
申请号 |
US20050252290 |
申请日期 |
2005.10.17 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
CHANG SHIH-MING;CHIN CHIH-CHENG;WANG WEN-CHUAN;LU CHI-LUN;CHIN SHENG-CHI |
分类号 |
H01L21/306;B44C1/22;G03F1/00;H01L21/461 |
主分类号 |
H01L21/306 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|