发明名称 Process for manufacturing a SOI wafer with improved gettering capability
摘要 Manufacturing of a wafer made of semiconductor material on insulator including the steps of: providing a composite wafer having a substrate, an insulating layer and an active layer of semiconductor material, arranged on top of one another; forming at least one deep trench within the active layer of the composite wafer, having at least one side wall; and filling at least partially the deep trench with insulating material. Prior to the filling step, the step is carried out of coating the side wall of the deep trench with a gettering layer, having the function of segregating the impurities within the active layer.
申请公布号 US2006194409(A1) 申请公布日期 2006.08.31
申请号 US20060347801 申请日期 2006.02.03
申请人 STMICROELECTRONICS S.R.L. 发明人 CAPEDELLI ROBERTO;TURI LUIGI D.;FARALLI DINO
分类号 H01L21/76;H01L21/30;H01L29/00 主分类号 H01L21/76
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