| 发明名称 |
Semiconductor substrate, method of manufacturing the semiconductor substrate, semiconductor device and pattern forming method |
| 摘要 |
A semiconductor substrate comprises a semiconductor layer comprising a group III nitride as a main component. A scattering portion for scattering an incident beam of light incident on one plane of the semiconductor layer is provided on another plane or inside of the semiconductor layer.
|
| 申请公布号 |
US2005167692(A1) |
申请公布日期 |
2005.08.04 |
| 申请号 |
US20050092804 |
申请日期 |
2005.03.30 |
| 申请人 |
|
发明人 |
ISHIDA MASAHIRO;OGAWA MASAHIRO;MANNOH MASAYA;YURI MASAAKI |
| 分类号 |
H01L21/027;G03F7/09;H01L33/00;H01L33/20;H01L33/22;(IPC1-7):H01L21/00 |
主分类号 |
H01L21/027 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
