发明名称 |
DISPOSITIVO DI MEMORIA A SEMICONDUTTORI. |
摘要 |
A higher packing of cells in a memory circuit includes a plurality of word line drivers employing a plurality of word lines, a plurality of bit lines, and various decoders. Disclosed is the array method of the word line drivers, which can reduce the pitch between the word line drivers so that the layout of the semiconductor memory array may be easily accomplished. Moreover, the array method of other components of the memory array is suggested. |
申请公布号 |
IT9048185(A1) |
申请公布日期 |
1991.06.30 |
申请号 |
IT19900048185 |
申请日期 |
1990.07.31 |
申请人 |
SAMSUNG-ELECTRONICS CO., LTD. |
发明人 |
CHO SU-IN;KIM YOUNG-RAE;MIN DONG-SUN;SHU DONG-IL |
分类号 |
G11C11/401;G11C;G11C5/06;G11C8/14;G11C11/34;H01L21/822;H01L21/8242;H01L23/522;H01L23/528;H01L27/04;H01L27/10;H01L27/108 |
主分类号 |
G11C11/401 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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