Nitrides semiconductor laser diode,申请号KR20020082389-传众专利搜索

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发明名称	Nitrides semiconductor laser diode
摘要
申请公布号	KR100915056(B1)	申请公布日期	2009.09.02
申请号	KR20020082389	申请日期	2002.12.23
申请人		发明人
分类号	H01S3/0941	主分类号	H01S3/0941
代理机构		代理人
主权项
地址

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