MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

摘要

A manufacturing method of a semiconductor device is provided to improve a device property such as a refresh of a semiconductor device by improving a short channel effect without usage of a high cost device. A device isolation film(13) defines an active region, and is formed on a top of a semiconductor substrate(11). A hard mask film(15) and a photoresist film are successively formed on a top of the semiconductor substrate including the device isolation film. A first photoresist pattern is formed by using a lithography process. A second photoresist pattern is formed by using the first photoresist pattern. A hard mask film pattern is formed by etching the hard mask film. A first recess is formed by etching the semiconductor substrate. A second recess(23) is formed by vertically etching the semiconductor substrate of a bottom of the first recess.