| 摘要 |
A semiconductor device and method for manufacturing the same is provided to reduce parasitic capacitance between bit lies by making a first and a second spacer an insulating material with low dielectric constant. A gate insulating layer(102), a first conductive film(104), and a first hard mask film(106) are formed on a semiconductor substrate(100). An SAC(Self Align Contact) nitride film(108) is formed on the semiconductor substrate, and first insulating film(112) is formed on the nitride film. An etch stopping layer, a barrier metal film, a third conductive film and a second hard mask are formed on the substrate. A bit line is formed by etching process, and the third insulating film is formed to insulate the bit line. A first and a second spacer are changed into a fist insulating material with a low dielectric constant through a heat treatment process or plasma process.
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