发明名称 |
Nonpolar III-nitride light emitting diodes with long wavelength emission |
摘要 |
A III-nitride film, grown on an m-plane substrate, includes multiple quantum wells (MQWs) with a barrier thickness of 27.5 nm or greater and a well thickness of 8 nm or greater. An emission wavelength can be controlled by selecting the barrier thickness of the MQWs. Device fabricated using the III-nitride film include nonpolar III-nitride light emitting diodes (LEDs) with a long wavelength emission.
|
申请公布号 |
US7847280(B2) |
申请公布日期 |
2010.12.07 |
申请号 |
US20080189038 |
申请日期 |
2008.08.08 |
申请人 |
THE REGENTS OF THE UNIVERSITY OF CALIFORNIA |
发明人 |
YAMADA HISASHI;ISO KENJI;NAKAMURA SHUJI |
分类号 |
H01L31/00;H01L33/06;H01L33/16;H01L33/32 |
主分类号 |
H01L31/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|