| 摘要 |
<p>PURPOSE: A non-volatile memory device and a manufacturing method thereof are provided to prevent the deterioration of retention property of non-volatile memory device by removing a first nitride film formed on the top of a component separation layer and maintaining a first nitride film formed on a side wall of a floating gate. CONSTITUTION: A floating gate is formed on an active area of a semiconductor substrate(200). A component separation layer(208) is formed on a component separation area of the semiconductor substrate. A first nitride pattern(210a) is formed on a side wall of the floating gate. A first insulation layer(214), a second nitride layer(216), a second insulation layer(218), and a third nitride layer(220) are formed along the surface of the first nitride pattern and the component separation layer.</p> |
