发明名称 PLATING PROCESS DEVICE, PLATING PROCESS METHOD, AND STORAGE MEDIUM
摘要 A plating apparatus 20 includes a substrate holding device 110 configured to hold and rotate the substrate 2; a first discharge device 30 configured to discharge a plating liquid toward the substrate 2 held on the substrate holding device 110; and a top plate 21 that is provided above the substrate 2 and has an opening 22. The first discharge device 30 includes a first discharge unit 33 configured to discharge the plating liquid toward the substrate 2, and the first discharge unit 33 is configured to be moved between a discharge position where the plating liquid is discharged and a standby position where the plating liquid is not discharged. Further, the first discharge unit 33 is configured to be overlapped with the opening 22 of the top plate 21 at the discharge position.
申请公布号 KR20140143148(A) 申请公布日期 2014.12.15
申请号 KR20147025355 申请日期 2013.02.22
申请人 TOKYO ELECTRON LIMITED 发明人 INATOMI YUICHIRO;TANAKA TAKASHI;MIZUTANI NOBUTAKA;SAITO YUSUKE;IWASHITA MITSUAKI
分类号 H01L21/288;C23C18/16;C23C18/31;H01L21/683 主分类号 H01L21/288
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