发明名称 VANADIUM DOPED SIC SINGLE CRYSTALS AND METHOD THEREOF
摘要 <p>A sublimation grown SiC single crystal includes vanadium dopant incorporated into the SiC single crystal structure via introduction of a gaseous vanadium compound into a growth environment of the SiC single crystal during growth of the SiC single crystal.</p>
申请公布号 WO2014130108(A9) 申请公布日期 2015.04.16
申请号 WO2013US69630 申请日期 2013.11.12
申请人 II-VI INCORPORATED 发明人 ZWIEBACK, ILYA;ANDERSON, THOMAS, E.;GUPTA, AVINASH, K.;NOLAN, MICHAEL, C.;BROUHARD, BRYAN, K.;RULAND, GARY, E.
分类号 C30B23/06;C30B29/36 主分类号 C30B23/06
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