发明名称 Solar cell
摘要 A solar cell includes a substrate of a first conductive type, an emitter region, which is positioned at the substrate and is doped with impurities of a second conductive type opposite the first conductive type, a plurality of first electrodes, which are connected to the emitter region and extend parallel to one another to be spaced apart from one another, a plurality of semiconductor electrodes, which extend in a direction different from an extension direction of the plurality of first electrodes to be spaced apart from one another and have an impurity doping concentration higher than the emitter region, and a second electrode connected to the substrate. A distance between two adjacent semiconductor electrodes is about 0.02 cm to 0.2 cm, and a distance between two adjacent first electrodes is about 0.3 cm to 0.8 cm.
申请公布号 US9142697(B2) 申请公布日期 2015.09.22
申请号 US201213345155 申请日期 2012.01.06
申请人 LG ELECTRONICS INC. 发明人 Shim Seunghwan;Kim Jinah;Nam Jeongbeom;Chung Indo;Yang Juhong;Jung Ilhyoung;Kwon Hyungjin
分类号 H01L31/0224;H01L31/068;H01L31/18 主分类号 H01L31/0224
代理机构 Birch, Stewart, Kolasch & Birch, LLP 代理人 Birch, Stewart, Kolasch & Birch, LLP
主权项 1. A solar cell comprising: a substrate of a first conductive type; an emitter region, which is positioned at the substrate and is doped with impurities of a second conductive type opposite the first conductive type; a plurality of first electrodes, which are connected to the emitter region and extend parallel to one another to be spaced apart from one another; a first bus bar, which is connected to the plurality of first electrodes at crossings of the plurality of first electrodes and the first bus bar, and the emitter region, and is disposed in a first direction; a plurality of semiconductor electrodes including a plurality of first portions, which extend in the first direction, and a plurality of second portions, which extend in a second direction different from the first direction, the plurality of semiconductor electrodes each having an impurity doping concentration higher than the emitter region; and a second electrode connected to the substrate, wherein at least one of the second portions of the plurality of semiconductor electrodes is disposed between two adjacent first electrodes, and each of the plurality of second portions is not overlapped with the plurality of first electrodes, the first direction is the same as an extension direction of the first bus bar and the second direction is the same as an extension direction of the plurality of first electrodes, and the first direction crossing the second direction, a distance between the two adjacent first electrodes is about 0.2 cm to 1.2 cm, a distance between two adjacent first portions is about 0.01 cm to 0.35 cm, and a distance between two adjacent second portions is about 0.01 cm to 0.4 cm, and wherein upper surfaces of the plurality of semiconductor electrodes and an upper surface of the emitter region are coplanar.
地址 Seoul KR