Semiconductor light emitting device

摘要

According to one embodiment, a semiconductor light emitting device includes: a conductive layer; a first stacked body; a second stacked body; a first light-transmissive electrode; and a first interconnect electrode. The first stacked body includes a first semiconductor layer and a second semiconductor layer. The second semiconductor layer is provided between the first semiconductor layer and the conductive layer. The first light emitting layer is provided between the first semiconductor layer and the second semiconductor layer. The second stacked body includes a third semiconductor layer, a fourth semiconductor layer, and a second light emitting layer. The fourth semiconductor layer is provided between the third semiconductor layer and the conductive layer. The second light emitting layer is provided between the third semiconductor layer and the fourth semiconductor layer. The first interconnect electrode is provided between the second semiconductor layer and the third semiconductor layer.

主权项

1. A semiconductor light emitting device, comprising:
a conductive layer; a first stacked body including a first semiconductor layer provided to be separated from the conductive layer in a first direction, a second semiconductor layer provided between the first semiconductor layer and the conductive layer, and a first light emitting layer provided between the first semiconductor layer and the second semiconductor layer, the first light emitting layer emitting a first light; a second stacked body including a third semiconductor layer provided between the second semiconductor layer and the conductive layer, a fourth semiconductor layer provided between the third semiconductor layer and the conductive layer, and a second light emitting layer provided between the third semiconductor layer and the fourth semiconductor layer, the second light emitting layer emitting a second light; a first light-transmissive electrode provided between the second semiconductor layer and the third semiconductor layer to have ohmic contacts with the second semiconductor layer and the third semiconductor layer, the first light-transmissive electrode transmitting the first light and the second light; a first interconnect electrode provided between the second semiconductor layer and the third semiconductor layer to be electrically connected to the first light-transmissive electrode; a first electrode electrically connected to the first semiconductor layer; and a second electrode electrically connected to the second semiconductor layer and the third semiconductor layer, wherein the first light-transmissive electrode has:
a first transmissive region provided between the second semiconductor layer and the third semiconductor layer, anda second transmissive region arranged with the first transmissive region in a direction perpendicular to the first direction, wherein the first semiconductor layer is disposed between the first electrode and the first light emitting layer, and wherein the second transmissive region is disposed between the second electrode and the third semiconductor layer.