发明名称 |
FIELD EFFECT TRANSISTOR MEMORY DEVICE |
摘要 |
A method for generating a non-volatile memory device may comprise: applying plasma for a preset time period to an exposed surface of a channel of a field effect transistor such that a plurality of charge-trapping sites are formed at the channel. The channel is comprised of a multi-layer structure of atomically thin two-dimensional sheets. |
申请公布号 |
WO2015134904(A1) |
申请公布日期 |
2015.09.11 |
申请号 |
WO2015US19247 |
申请日期 |
2015.03.06 |
申请人 |
THE REGENTS OF THE UNIVERSITY OF MICHIGAN |
发明人 |
LIANG, XIAOGAN;NAM, HONGSUK;WI, SUNGJIN;CHEN, MIKAI |
分类号 |
H01L21/8247;H01L27/115;H01L29/78 |
主分类号 |
H01L21/8247 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|