发明名称 STORAGE CELL, STORAGE DEVICE, AND MAGNETIC HEAD
摘要 Provided is a storage cell that makes it possible to enhance magnetic characteristics of magnetization pinned layer, a storage device and a magnetic head that include the storage cell. The storage cell includes a layer structure including a base layer, a storage layer in which a direction of magnetization is varied in correspondence with information, a magnetization pinned layer that is formed above the base layer and has magnetization that is perpendicular to a film surface and serves as a reference of information stored in the storage layer, and an intermediate layer that is provided between the storage layer and the magnetization pinned layer and is made of a nonmagnetic body. The base layer has a laminated structure of ruthenium and a nonmagnetic body having a face-centered cubic lattice, and the ruthenium is formed at a location adjacent to the magnetization pinned layer.
申请公布号 US2015255134(A1) 申请公布日期 2015.09.10
申请号 US201314430478 申请日期 2013.08.22
申请人 Sony Corporation 发明人 Uchida Hiroyuki;Hosomi Masanori;Ohmori Hiroyuki;Bessho Kazuhiro;Higo Yutaka;Asayama Tetsuya;Yamane Kazutaka
分类号 G11C11/16;H01L43/08;H01L43/10;H01L43/02 主分类号 G11C11/16
代理机构 代理人
主权项 1. A storage cell comprising a layer structure including a base layer, a storage layer in which a direction of magnetization is varied in correspondence with information, a magnetization pinned layer that is formed above the base layer and has magnetization that is perpendicular to a film surface and serves as a reference of information stored in the storage layer, and an intermediate layer that is provided between the storage layer and the magnetization pinned layer and is made of a nonmagnetic body, wherein the base layer has a laminated structure of ruthenium and a nonmagnetic body having a face-centered cubic lattice, and the ruthenium is formed at a location adjacent to the magnetization pinned layer.
地址 Tokyo JP