发明名称 |
STORAGE CELL, STORAGE DEVICE, AND MAGNETIC HEAD |
摘要 |
Provided is a storage cell that makes it possible to enhance magnetic characteristics of magnetization pinned layer, a storage device and a magnetic head that include the storage cell. The storage cell includes a layer structure including a base layer, a storage layer in which a direction of magnetization is varied in correspondence with information, a magnetization pinned layer that is formed above the base layer and has magnetization that is perpendicular to a film surface and serves as a reference of information stored in the storage layer, and an intermediate layer that is provided between the storage layer and the magnetization pinned layer and is made of a nonmagnetic body. The base layer has a laminated structure of ruthenium and a nonmagnetic body having a face-centered cubic lattice, and the ruthenium is formed at a location adjacent to the magnetization pinned layer. |
申请公布号 |
US2015255134(A1) |
申请公布日期 |
2015.09.10 |
申请号 |
US201314430478 |
申请日期 |
2013.08.22 |
申请人 |
Sony Corporation |
发明人 |
Uchida Hiroyuki;Hosomi Masanori;Ohmori Hiroyuki;Bessho Kazuhiro;Higo Yutaka;Asayama Tetsuya;Yamane Kazutaka |
分类号 |
G11C11/16;H01L43/08;H01L43/10;H01L43/02 |
主分类号 |
G11C11/16 |
代理机构 |
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代理人 |
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主权项 |
1. A storage cell comprising
a layer structure including a base layer, a storage layer in which a direction of magnetization is varied in correspondence with information, a magnetization pinned layer that is formed above the base layer and has magnetization that is perpendicular to a film surface and serves as a reference of information stored in the storage layer, and an intermediate layer that is provided between the storage layer and the magnetization pinned layer and is made of a nonmagnetic body, wherein the base layer has a laminated structure of ruthenium and a nonmagnetic body having a face-centered cubic lattice, and the ruthenium is formed at a location adjacent to the magnetization pinned layer. |
地址 |
Tokyo JP |