SILICON CARBIDE SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SILICON CARBIDE SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a silicon carbide semiconductor device in which a film which is composed of elemental titanium and has an intended thickness is provided while maintaining sufficient embedding of a contact hole and surface flatness of a wiring layer.SOLUTION: A silicon carbide semiconductor device manufacturing method comprises the steps of: forming on an insulation film 3, a first film 7 which covers a contact hole CH and is made from titanium; forming on the first film, a second film 8 made from either of platinum or titanium nitride; forming on the second film, a third film 9 made from polycrystal silicon; and forming on the third film 9, a wiring layer made form an aluminum-containing material. The step of forming the wiring layer includes a step of depositing the wiring layer and a step of heating the wiring layer at least during the step of depositing the wiring layer or after the step of depositing the wiring layer.