STORAGE DEVICE, SEMICONDUCTOR DEVICE, STORAGE DEVICE MANUFACTURING METHOD, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD

摘要

This storage device is characterized in that: the storage device has disposed therein two or more columns and two or more rows of storage elements, which respectively have columnar phase change layers (176a-176d), reset gate insulating films (182) that surround the columnar phase change layers, and reset gates (183) that surround the reset gate insulating films; the reset gates are connected in the column direction and the row direction; and the reset gates are heaters. With the storage device, memory having the storage device is provided, said storage device having the phase change layers that can be reset using the reset gates.