Method and apparatus for repairing defective memory cells

摘要

A method for repairing defective memory cells includes receiving an access command having an access address and an access operation. The access address includes a row address and a column address. The method further includes determining whether the row address and the column address are the same as a pre-recorded row address and column address of a defective memory cell. If the row and column addresses of the access address are the same as the respective row and column addresses of the defective memory cell, the method includes replacing the defective memory cell with a redundant memory cell, and executing the access operation using the redundant memory cell.

主权项

1. A method for repairing defective memory cells of a memory device, the method comprising:
receiving an access command having an access address and an access operation, the access address including a row address and a column address; determining whether the row address and the column address of the access address are the same as a pre-recorded row address and column address of a defective memory cell; if the row address and the column address of the access address are the same as the respective row and column addresses of the defective memory cell, finding a redundant memory cell associated with the defective memory cell in response to the access address; and executing the access operation using the redundant memory cell.