| 发明名称 |
SEMICONDUCTOR STRUCTURE |
| 摘要 |
A semiconductor structure includes a first conductive path and a second conductive path configured to carry a first pair of differential signals representative of an in-phase signal. The semiconductor device further includes a third conductive path and a fourth conductive path configured to carry a second pair of differential signals representative of a quadrature signal corresponding to the in-phase signal. The first and second conductive paths are in a conductive layer of the semiconductor structure, and the third and fourth conductive paths are in another conductive layer of the semiconductor structure. |
| 申请公布号 |
US2015228576(A1) |
申请公布日期 |
2015.08.13 |
| 申请号 |
US201514698168 |
申请日期 |
2015.04.28 |
| 申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
LEE Hui Yu;KUO Feng Wei;KUAN Jui-Feng;CHENG Yi-Kan |
| 分类号 |
H01L23/528;H01L23/522 |
主分类号 |
H01L23/528 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor structure comprising:
a first conductive path and a second conductive path configured to carry a first pair of differential signals representative of an in-phase signal; and a third conductive path and a fourth conductive path configured to carry a second pair of differential signals representative of a quadrature signal corresponding to the in-phase signal, wherein the first and second conductive paths are in a conductive layer of the semiconductor structure, and the third and fourth conductive paths are in another conductive layer of the semiconductor structure. |
| 地址 |
Hsinchu TW |
