| 摘要 |
This power semiconductor device is provided with: a power semiconductor element (11); at least one ceramic insulating circuit board (23A) wherein a circuit electrode (3A) is formed on a ceramic substrate (2A); a first insulating resin (16) that seals the power semiconductor element (11) and the circuit electrode (3A) of the ceramic substrate (2A), in a state wherein at least one electrode surface of the power semiconductor element (11) and the circuit electrode (3A) of the ceramic insulating circuit board (23A) are electrically connected to each other; and a second insulating resin (17A), which is provided at least on a part between the ceramic substrate board (2A) and the first insulating resin (16), and which has higher bonding strength to a ceramic of the ceramic substrate (2A) than the first insulating resin (16). |
