SEMICONDUCTOR DEVICE MANUFACTURING METHOD, SEMICONDUCTOR DEVICE AND SEMICONDUCTOR COMPOSITE DEVICE

摘要

PROBLEM TO BE SOLVED: To obtain a Si thin film and the like with high productivity, which has a flat peeling surface and where a high-quality circuit/element formation region is formed from a first substrate composed of a Si (111) substrate.SOLUTION: A semiconductor device 1 includes a Si thin film 12a where a circuit/element formation region 13 is formed, in which a lower surface of the Si thin film 12a is directly and tightly adhered on and fixed on a second substrate 30 or a bonding layer 31 formed on a surface of the second substrate 30 via an etching stop film 11a. A manufacturing method of a semiconductor device 1 comprises the steps of: forming an etching stop film 11a on a first substrate; forming a Si thin film 2a on the etching stop film 11a; performing etching along a (111) plane of the first substrate to peel off the etching stop film 11a and the Si thin film 12a from the first substrate; and subsequently bonding a lower surface of the etching stop film 11a of the peeled etching stop film 11a and Si thin film 12a on the second substrate 30 or on the bonding layer 31.