| 摘要 |
PROBLEM TO BE SOLVED: To reduce an on-resistance and enable an operation in a high-frequency region, in a semiconductor device using a nitride semiconductor.SOLUTION: A semiconductor device comprises: a first semiconductor layer 21 formed on a substrate 10 by a nitride semiconductor; a second semiconductor layer 22 provided on the first semiconductor layer 21; a third semiconductor layer provided on the second semiconductor layer 22; a drain electrode 43 and a gate electrode 41 formed on the third semiconductor layer 23; an opening formed by removing the third semiconductor layer 23 and the second semiconductor layer 22; and a source electrode 42 formed in the opening. The source electrode 42 is formed by laminating a first conductive layer 42a and a second conductive layer 42b. The first conductive layer 42a is contacted with the first semiconductor layer 21. The second conductive layer 42b is contacted with the second semiconductor layer 22. A work function of a material forming the first conductive layer 42a is smaller than that of a material forming the second conductive layer 42b. |
