SUBSTRATE FOR SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING SUBSTRATE FOR SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a substrate for a semiconductor device capable of suppressing breakage of a semiconductor chip caused by thermal expansion coefficient difference, and also to provide a semiconductor device, a method of manufacturing the substrate for the semiconductor device and a method of manufacturing the semiconductor device. ! SOLUTION: A substrate for a semiconductor device includes an insulation ceramic substrate, and a metal layer for a wiring circuit provided on the insulation ceramic substrate. The metal layer for the wiring circuit contains a composite material of copper and molybdenum or a composite material of copper and tungsten. ! COPYRIGHT: (C)2015,JPO&INPIT