发明名称 PHOTOELECTRIC CONVERSION DEVICE MANUFACTURING METHOD AND PHOTOELECTRIC CONVERSION DEVICE
摘要 PROBLEM TO BE SOLVED: To reduce variation in relative positional relationship between a charge storage region of each photoelectric conversion element and an isolation region arranged between the charge storage regions in manufacturing of a photoelectric conversion device in which a plurality of photoelectric conversion elements are arranged for one ML (microlens).SOLUTION: A manufacturing method of a photoelectric conversion device in which one microlens is arranged for a plurality of charge storage regions formed on a semiconductor substrate comprises: a first process of forming a first impurity region of a first conductivity type on the semiconductor substrate; and a second process of forming on a part of the first impurity region, a second impurity region of a second conductivity type opposite to the first conductivity type and isolating a plurality of regions from the first impurity region in a manner such that each of the plurality of charge storage regions has the isolated first impurity region.
申请公布号 JP2015103606(A) 申请公布日期 2015.06.04
申请号 JP20130241947 申请日期 2013.11.22
申请人 CANON INC 发明人 IWATA JUNJI
分类号 H01L27/146;H01L31/08;H04N5/369;H04N5/374 主分类号 H01L27/146
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