NONVOLATILE MEMORY DEVICE

摘要

A nonvolatile memory device may include: an isolation layer formed in a substrate and defining an active region; a control plug formed over the isolation layer; a floating gate formed over the substrate and including a plurality of fingers adjacent to the control plug with a gap provided therebetween; and a charge blocking layer formed on sidewalls of the floating gate so as to fill the gap. The control plug may include: a first control plug formed between the plurality of fingers and having sidewalls facing inner walls of the fingers; and a second control plug formed outside the floating gate and having sidewalls facing outer walls of the fingers.

主权项

1. A nonvolatile memory device comprising:
an isolation layer formed in a substrate and defining an active region; a control plug formed over the isolation layer; a floating gate formed over the substrate and comprising a plurality of fingers adjacent to the control plug with a gap provided therebetween; and a charge blocking layer formed on sidewalls of the floating gate so as to fill the gap, wherein the control plug comprises:
a first control plug formed between the plurality of fingers and having sidewalls facing inner walls of the fingers; anda second control plug formed outside the floating gate and having sidewalls facing outer walls of the fingers.