METAL-SEMICONDUCTOR WAFER BONDING FOR HIGH-Q DEVICES

摘要

Methods and apparatus for metal semiconductor wafer bonding for high-Q devices are provided. An exemplary capacitor includes a first plate formed on a glass substrate, a second plate, and a dielectric layer. No organic bonding agent is used between the first plate and the glass substrate, and the dielectric layer can be an intrinsic semiconductor. A extrinsic semiconductor layer that is heavily doped contacts the dielectric layer. The dielectric and extrinsic semiconductor layers are sandwiched between the first and second plates. An intermetallic layer is formed between the first plate and the dielectric layer. The intermetallic layer is thermo compression bonded to the first plate and the dielectric layer. The capacitor can be coupled in a circuit as a high-Q capacitor and/or a varactor, and can be integrated with a mobile device.

主权项

1. A method for fabricating a capacitor (300), comprising:
forming (505) a first plate (310) on a glass substrate (305); forming (510) a dielectric layer (315) on a silicon substrate (410); bonding (515) the first plate to the dielectric layer with an intermetallic layer (320) using thermo compression; doping (520) the silicon substrate to form an extrinsic semiconductor layer (325); and forming (525) a second plate on the extrinsic semiconductor layer.