Semiconductor device and method of fabricating the same

摘要

The present application discloses a semiconductor device and a method for manufacturing the same. The semiconductor device comprises a semiconductor substrate; a first semiconductor layer on the semiconductor substrate; a second semiconductor layer surrounding the first semiconductor layer; a high k dielectric layer and a gate conductor formed on the first semiconductor layer; source/drain regions formed in the second semiconductor layer, wherein the second semiconductor layer has a slant sidewall in contact with the first semiconductor layer. The semiconductor device has an increased output current, an increased operating speed, and a reduced power consumption due to the channel region of high mobility.

主权项

1. A semiconductor device, comprising
a semiconductor substrate; a first semiconductor layer on the semiconductor substrate, and a second semiconductor layer surrounding the first semiconductor layer; a gate dielectric layer and a gate conductor formed on the first semiconductor layer; and source/drain regions formed in the second semiconductor layer, wherein the second semiconductor layer has a slant sidewall in contact with the first semiconductor layer, and wherein the first semiconductor layer has a top surface and a bottom surface matching {100} plane of Si, and a sidewall in contact with the second semiconductor layer and matching {111} plane of Si.