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发明名称
Verfahren zur Herstellung von Halbleiteranordnungen durch einkristallines Aufwachsen von Schichten
摘要
申请公布号
AT244391(B)
申请公布日期
1966.01.10
申请号
AT19640001297
申请日期
1964.02.17
申请人
SIEMENS & HALSKE AKTIENGESELLSCHAFT
发明人
分类号
H01L
主分类号
H01L
代理机构
代理人
主权项
地址
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