| 摘要 |
The arrangement (2) has a set of memory modules (4-1-4-m) electrically connected in series with each other. An inductive cell memory element and a set of cell switches are electrically switched in parallel to each other such that an inductive module memory element is switched electrically parallel to a set of memory cells (6-1-6-n) of each memory module. Each memory cell is magnetically coupled with the inductive cell memory element by a coupling element. A series arrangement of a power resistor and a module switch is switched electrically parallel to a series arrangement of the memory cells. |
