发明名称 |
METAL ASSISTED ETCH COMBINED WITH REGULARIZING ETCH |
摘要 |
In an aspect of the disclosure, a process for forming nanostructuring on a silicon-containing substrate is provided. The process comprises (a) performing metal-assisted chemical etching on the substrate, (b) performing a clean, including partial or total removal of the metal used to assist the chemical etch, and (c) performing an isotropic or substantially isotropic chemical etch subsequently to the metal-assisted chemical etch of step (a). In an alternative aspect of the disclosure, the process comprises (a) performing metal-assisted chemical etching on the substrate, (b) cleaning the substrate, including removal of some or all of the assisting metal, and (c) performing a chemical etch which results in regularized openings in the silicon substrate. |
申请公布号 |
WO2015038340(A1) |
申请公布日期 |
2015.03.19 |
申请号 |
WO2014US53000 |
申请日期 |
2014.08.27 |
申请人 |
BANDGAP ENGINEERING, INC. |
发明人 |
YIM, JOANNE;MILLER, JEFF;JURA, MICHAEL;BLACK, MARCIE, R.;FORZIATI, JOANNE;MURPHY, BRIAN;MAGLIOZZI, LAUREN |
分类号 |
H01L21/306;B82Y40/00 |
主分类号 |
H01L21/306 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|