SINGLE PHOTON SOURCE DIE AND METHOD OF MANUFACTURING THE SAME

摘要

A single photon source die includes a first semiconductor layer, a plurality of columnar structures formed on the first semiconductor layer, a second semiconductor layer formed on the columnar structures. Each columnar structure includes a bottom layer, a single photon point layer and a connecting layer. The single photon point layer includes a plurality of single photon points.

主权项

1. A method of manufacturing a single photon source die comprising:
providing a precursor comprising a first semiconductor layer, a prep layer and a connecting layer, the prep layer and the connecting layer being formed on the first semiconductor layer successively; etching the connecting layer, the prep layer and a part of the first semiconductor layer to form a plurality of wedge structures and a surface defined on the first semiconductor and between the wedge structures; etching the wedge structures to form a plurality of columnar structures, each columnar structures having a flank; annealing a semi-finished product obtained from above; forming a middle layer on the surface of the first semiconductor layer and the flank of the each columnar structure; forming a second semiconductor layer on the columnar structures; and forming two electrodes on the second semiconductor layer and the first semiconductor layer respectively.