MAGNETIC MEMORY DEVICE

摘要

A magnetic memory device is provided. The magnetic memory device may include a plurality of word lines extending along a direction crossing a plurality of active regions and at least one source line connected to a plurality of first active regions arranged on a level that is lower than the upper surface of a substrate. A plurality of contact pads may be connected to a plurality of second active regions and a plurality of buried contact plugs may be connected to the plurality of second active regions via the plurality of contact pads. Said buried contact pads may further be arranged in a hexagonal array structure. A plurality of variable resistance structures may be connected to the plurality of second active regions and arranged in a hexagonal array structure.

主权项

1. A magnetic memory device comprising:
a substrate having a plurality of active regions defined therein, wherein the plurality of active regions extend parallel to each other along a first direction; a plurality of word lines, each word line extending on the plurality of active regions along a second direction that crosses the first direction; at least one source line extending along the second direction, wherein said source line is connected to a plurality of first active regions selected from among the plurality of active regions; a plurality of contact pads connected to a plurality of second active regions selected from among the plurality of active regions; a plurality of buried contact plugs connected to the plurality of second active regions via the plurality of contact pads and arranged in a hexagonal array structure; and a plurality of variable resistance structures connected to the plurality of second active regions via the plurality of contact pads and arranged in a hexagonal array structure.