发明名称 |
LOW TEMPERATURE PLASMA ANNEAL PROCESS FOR SUBLIMATIVE ETCH PROCESSES |
摘要 |
<p>Methods for etching a material layer disposed on the substrate using a low temperature etching process along with a subsequent low temperature plasma annealing process are provided. In one embodiment, a method for etching a material layer disposed on a substrate includes transferring a substrate having a material layer disposed thereon into an etching processing chamber, supplying an etching gas mixture into the processing chamber, remotely generating a plasma in the etching gas mixture to etch the material layer disposed on the substrate, and plasma annealing the material layer at a substrate temperature less than 100 degrees Celsius.</p> |
申请公布号 |
WO2015030968(A1) |
申请公布日期 |
2015.03.05 |
申请号 |
WO2014US48195 |
申请日期 |
2014.07.25 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
NEMANI, SRINIVAS D.;KANG, SEAN;PENDER, JEREMIAH T.;KAO, CHIA-LING;BELOSTOTSKIY, SERGEY G.;ZHU, LINA |
分类号 |
H01L21/3065;H01L21/324 |
主分类号 |
H01L21/3065 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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