发明名称 |
CLUSTER APPARATUS FOR TREATING SUBSTRATE |
摘要 |
Provide an apparatus for selective epitaxial growth. The apparatus for selective epitaxial growth, the apparatus comprising, a process tube comprising an inner tube in which a substrate stack unit for receiving a plurality of substrates is accommodated and an outer tube surrounding the inner tube, a heater assembly disposed to surround the process tube and a side nozzle unit vertically disposed inside the process tube, wherein the side nozzle unit comprises first and second side nozzles for respectively spraying an etching gas and a depo gas for the selective epitaxial growth. |
申请公布号 |
US2015059978(A1) |
申请公布日期 |
2015.03.05 |
申请号 |
US201314388914 |
申请日期 |
2013.03.26 |
申请人 |
Kookje Electric Korea Co., Ltd. |
发明人 |
Park Yong Sung;Lee Sung Kwang;Kim Dong Yeul;Kim Ki Hoon |
分类号 |
C30B25/14;H01L21/67;C30B25/10 |
主分类号 |
C30B25/14 |
代理机构 |
|
代理人 |
|
主权项 |
1. An apparatus for selective epitaxial growth, the apparatus comprising:
a process tube comprising an inner tube in which a substrate stack unit for receiving a plurality of substrates is accommodated and an outer tube surrounding the inner tube; a heater assembly disposed to surround the process tube; and a side nozzle unit vertically disposed inside the process tube, wherein the side nozzle unit comprises first and second side nozzles for respectively spraying an etching gas and a depo gas for the selective epitaxial growth. |
地址 |
Chungcheongnam-do KR |