发明名称 CLUSTER APPARATUS FOR TREATING SUBSTRATE
摘要 Provide an apparatus for selective epitaxial growth. The apparatus for selective epitaxial growth, the apparatus comprising, a process tube comprising an inner tube in which a substrate stack unit for receiving a plurality of substrates is accommodated and an outer tube surrounding the inner tube, a heater assembly disposed to surround the process tube and a side nozzle unit vertically disposed inside the process tube, wherein the side nozzle unit comprises first and second side nozzles for respectively spraying an etching gas and a depo gas for the selective epitaxial growth.
申请公布号 US2015059978(A1) 申请公布日期 2015.03.05
申请号 US201314388914 申请日期 2013.03.26
申请人 Kookje Electric Korea Co., Ltd. 发明人 Park Yong Sung;Lee Sung Kwang;Kim Dong Yeul;Kim Ki Hoon
分类号 C30B25/14;H01L21/67;C30B25/10 主分类号 C30B25/14
代理机构 代理人
主权项 1. An apparatus for selective epitaxial growth, the apparatus comprising: a process tube comprising an inner tube in which a substrate stack unit for receiving a plurality of substrates is accommodated and an outer tube surrounding the inner tube; a heater assembly disposed to surround the process tube; and a side nozzle unit vertically disposed inside the process tube, wherein the side nozzle unit comprises first and second side nozzles for respectively spraying an etching gas and a depo gas for the selective epitaxial growth.
地址 Chungcheongnam-do KR