| 摘要 |
<p>Techniques for decoding levels in non-volatile memory. A level of a cell in a multi-bit non-volatile memory is read. A minimum of Log-Likelihood Ratio (LLR) and a modified LLR to decode the level, wherein the modified LLR is a function of a misplacement probability is used. A value corresponding the decoded level is written to a volatile memory.</p> |
