发明名称 THIN FILM TRANSISTOR SUBSTRATE, MANUFACTURING METHOD OF THE SAME AND DISPLAY DEVICE INCLUDING THE SAME
摘要 <p>PROBLEM TO BE SOLVED: To provide a thin film transistor substrate, a manufacturing method of the same and a display device including the same.SOLUTION: A thin film transistor substrate according to one embodiment comprises: a substrate; a semiconductor layer lying on the substrate; a gate insulation film lying on the semiconductor layer; a gate electrode lying on the gate insulation film; an interlayer insulation film which lies on the gate electrode and includes a source contact hole and a drain contact hole for exposing a part of the semiconductor layer; and a source electrode and a drain electrode which are inserted into the source contact hole and the drain contact hole, respectively. The interlayer insulation film includes a first salient formed on inlet ports of the source contact hole and the drain contact hole.</p>
申请公布号 JP2015026810(A) 申请公布日期 2015.02.05
申请号 JP20140057886 申请日期 2014.03.20
申请人 SAMSUNG DISPLAY CO LTD 发明人 CHOI DAN BI;LEE JUNG HUN
分类号 H01L21/336;G02F1/1368;G09F9/30;H01L21/28;H01L21/288;H01L21/306;H01L29/786;H01L51/50 主分类号 H01L21/336
代理机构 代理人
主权项
地址