| 发明名称 |
REMOVING METAL FILLS IN A WIRING LAYER |
| 摘要 |
The present invention relates to a semiconductor manufacturing method, a mask forming method and a semiconductor structure. According to one aspect of the invention, a semiconductor manufacturing method is provided, comprising: forming a metal wiring layer on a semiconductor substrate, the metal wiring layer comprising dielectrics and metal wires and metal FILLs within the dielectrics; removing the metal FILLs in the metal wiring layer completely to form the metal wiring layer without the metal FILLs. With the technical solution according to embodiments of the invention, undesirable influences due to metal FILLs will be eliminated. |
| 申请公布号 |
US2015035153(A1) |
申请公布日期 |
2015.02.05 |
| 申请号 |
US201414328760 |
申请日期 |
2014.07.11 |
| 申请人 |
International Business Machines Corporation |
发明人 |
Fang DaSheng;Quan Yuan;Wang Xiaoxia;Zeng Liang Ying;Zhang Jingyang |
| 分类号 |
H01L21/768;H01L23/498 |
主分类号 |
H01L21/768 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor manufacturing method, comprising:
forming a metal wiring layer on a semiconductor substrate, the metal wiring layer comprising dielectrics and metal wires and metal FILLs within the dielectrics; and removing the metal FILLs in the metal wiring layer completely to form the metal wiring layer without the metal FILLs. |
| 地址 |
Armonk NY US |
