| 摘要 |
PROBLEM TO BE SOLVED: To provide a patterning process capable of forming a hole pattern by positive-negative inversion through development using a resist composition for negative pattern formation that achieves high dissolution contrast and high sensitivity in organic solvent development and an organic solvent.SOLUTION: A patterning process is provided, which comprises the steps of: applying the following resist composition on a substrate and heating to form a resist film; exposing the resist film with a high-energy beam and heating; then dissolving an unexposed portion by using a developing solution comprising an organic solvent to obtain a negative pattern in which an exposed portion is not dissolved; and applying and baking a solution on the pattern, the solution containing a crosslinking agent having a nitrogen atom and/or an aromatic group that are bonded to a substituted or unsubstituted methylol group, to crosslink on the surface of the negative pattern, thereby reducing a dimension in a space portion of the negative pattern. The resist composition comprises: a polymeric compound having a repeating unit in which a hydroxy group is substituted with an acid labile group; an acid generator; and an organic solvent. The resist film obtained according to the present invention shows a high dissolution contrast, with high solubility of an unexposed portion and low solubility of an exposed portion, in image formation by positive-negative inversion through development with an organic solvent. |
