Silicon wafer of mixed structure using wet etching process and preparing thereof

摘要

The present invention relates to a silicon wafer of a mixed structure using a wet etching process and a manufacturing method thereof. More particularly, in a silicon wafer which has orientation and a pyramid pattern by wet etching, nanowires are formed in the crystal direction of silicon on the pyramid pattern. Provided is a pyramid and nanowire silicon wafer having a mixed structure using a wet etching process.