发明名称 Semiconductor memory and method of making the same
摘要 A semiconductor memory includes a first bit cell within an integrated circuit (IC), and a second bit cell within the same IC. The first bit cell has a first layout, and the second bit cell has a second layout that differs from the first layout.
申请公布号 US8947902(B2) 申请公布日期 2015.02.03
申请号 US201213412804 申请日期 2012.03.06
申请人 Taiwan Semiconductor Manufacturing Co., Ltd. 发明人 Liaw Jhon Jhy
分类号 G11C5/06 主分类号 G11C5/06
代理机构 Duane Morris LLP 代理人 Duane Morris LLP
主权项 1. A semiconductor memory, comprising: a first bit cell of a first memory type within an integrated circuit (IC), the first bit cell of the first memory type having a first layout, the first layout including a first word line disposed in a first conductive layer and extending in a first direction, and, anda plurality of bit lines disposed in a second conductive layer and extending in a second direction; and a second bit cell of the first memory type within the same IC as the first bit cell, the second bit cell of the first memory type having second layout, the second layout including a second word line disposed in the second conductive layer and extending in the first direction, anda plurality of bit lines disposed in the first conductive layer and extending in the second direction, wherein the first layout differs from the second layout in that a size of the first layout is different from a size of the second layout.
地址 Hsin-Chu TW