METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

A semiconductor device includes an input electrode provided on a front surface of a semiconductor substrate of a first conductivity type and an output electrode provided on a rear surface of the semiconductor substrate. The device has reduced deterioration of electrical characteristics when manufactured by a method including introducing impurities into the rear surface of the semiconductor substrate; activating the impurities using a first annealing process to form a first semiconductor layer, which is a contact portion in contact with the output electrode, in a surface layer of the rear surface; radiating protons to the rear surface; and activating the protons radiated using a second annealing process to form a second semiconductor layer of the first conductivity type, which has a higher impurity concentration than the semiconductor substrate, in a region that is deeper than the first semiconductor layer from the rear surface of the semiconductor substrate.

主权项

1. A method for manufacturing a semiconductor device including an input electrode that is provided on a front surface of a semiconductor substrate of a first conductivity type and an output electrode that is provided on a rear surface of the semiconductor substrate, the method comprising:
introducing impurities into the rear surface of the semiconductor substrate; activating the impurities introduced into the rear surface of the semiconductor substrate using a first annealing process to form a first semiconductor layer, which is a contact portion in contact with the output electrode, in a surface layer of the rear surface of the semiconductor substrate; radiating protons to the rear surface of the semiconductor substrate after the first annealing process; and activating the protons radiated to the rear surface of the semiconductor substrate using a second annealing process to form a second semiconductor layer of the first conductivity type, which has a higher impurity concentration than the semiconductor substrate, in a region that is deeper than the first semiconductor layer from the rear surface of the semiconductor substrate.