| 摘要 |
<p>The present invention provides a method of manufacturing a thin film transistor of a top-contact structure with suppressed deterioration by a process which is easy and suitable for increase in area without damaging an organic semiconductor pattern. The organic semiconductor pattern 7a is formed on a substrate 1. An electrode material film 13 is formed on the substrate 1 so as to cover the organic semiconductor pattern 7a. A resist pattern 15 is formed on the electrode material film 13. By wet etching using the resist pattern 15 as a mask, the electrode material film 13 is patterned. By the process, a source electrode 13s and a drain electrode 13d are formed.</p> |
