| 摘要 |
A light emitting diode (LED) with a vertical structure, including electrical contacts on opposing sides, provides increased brightness. In some embodiments an LED includes a nitride semiconductor light emitting component grown on a sapphire substrate, a Zn(Mg,Cd,Be)O(S,Se) assembly formed on the nitride semiconductor component, and a further Zn(Mg,Cd,Be)O(S,Se) assembly bonded on an opposing side of the light emitting component, which is exposed by removing the sapphire substrate. Electrical contacts may be connected to the Zn(Mg,Cd,Be)O(S,Se) assembly and the further Zn(Mg,Cd,Be)O(S,Se) assembly. Herein Zn(Mg,Cd,Be)O(S,Se) is a II-VI semiconductor satisfying a formula Zn1-a-b-cMgaCdbBecO1-p-qSpSeq, wherein a=0˜1, b=0˜1, c=0˜1, p=0˜1, and q=0˜1. |
| 主权项 |
1. A light emitting diode (LED), comprising:
a nitride semiconductor light emitting component containing at least a p-type nitride semiconductor and an n-type nitride semiconductor, the nitride semiconductor light emitting component having a positive side and a negative side; a conductive Zn(Mg,Cd,Be)O(S,Se) assembly attached to the positive side of the nitride semiconductor light emitting component; a positive electrode coupled to the conductive Zn(Mg,Cd,Be)O(S,Se) assembly; and a negative electrode coupled to the negative side of the nitride semiconductor light emitting component. |
