| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device (DRAM) comprising a transistor in which a gate electrode is embedded into a groove. ! SOLUTION: A method of manufacturing a semiconductor device comprises the steps of: forming a first liner film 47 covering an upper surface of an embedded gate electrode 44 and side walls of upper portions 27-2 and 28-2 of a groove; forming a burying insulation film 53 so as to bury the upper portions of the groove via the first liner film; selectively removing a portion of a groove forming mask 25 which is located on a first impurity diffusion region and thereby forming a bit contact opening 57 which exposes an upper surface of the first impurity diffusion region 33; performing a preliminary treatment of the upper surface of the first impurity diffusion region which is exposed from the bit contact opening, using a chemical solution with which the groove forming mask and the first liner film are hardly etched and a silicon oxide film is selectively etched; and formin |
