SEMICONDUCTOR DEVICE

摘要

According to one embodiment, a semiconductor device includes a first semiconductor region, a first electrode, a second semiconductor region, a third semiconductor region, a fourth semiconductor region, a fifth semiconductor region, and a second electrode. The first electrode forms a Schottky junction with the first region. The second region is provided between the first region and the first electrode. The third region is provided between the first region and the first electrode and forms an ohmic junction with the first electrode. The fourth region is provided between the first region and the third region. The fourth region has a higher impurity concentration than the first region. The fifth region is provided between the third region and the first electrode. The fifth region has a higher impurity concentration than the third region. The second electrode is provided on opposite side of the first region from the first electrode.

主权项

1. A semiconductor device comprising:
a first semiconductor region of a first conductivity type; a first electrode forming a Schottky junction with the first semiconductor region; a second semiconductor region of a second conductivity type provided between the first semiconductor region and the first electrode; a third semiconductor region of the second conductivity type provided between the first semiconductor region and the first electrode, the third semiconductor region forming an ohmic junction with the first electrode; a fourth semiconductor region of the first conductivity type provided between the first semiconductor region and the third semiconductor region, the fourth semiconductor region having a higher impurity concentration than the first semiconductor region; a fifth semiconductor region of the second conductivity type provided between the third semiconductor region and the first electrode, the fifth semiconductor region having a higher impurity concentration than the third semiconductor region; and a second electrode provided on opposite side of the first semiconductor region from the first electrode.