发明名称 Connector terminal
摘要 A connector terminal which can achieve high mechanical connection strength and stabilized low electrical connection resistance when it is crimped to an aluminum electric wire, and in addition, can suppress electrical contact resistance low when it is fitted to a mating connector terminal is provided. In a connector terminal (1A) having an electrical contact section (10) which is brought into contact and conducted with a mating connector terminal by fitting to the mating connector terminal, and a conductor crimping section (12) which is crimped to the conductor of an electric wire, a metal material which constitutes the terminal uses aluminum or an aluminum alloy as a base material (100), a Zn layer (101) having a thickness in the range from 0.1 μm to 2.0 μm by electroless plating and a Cu layer (102) having a thickness in the range from 0.5 μm to 1.0 μm by electrolytic plating are formed in sequence on the surface of the base material (100), and an Sn layer (105) having a thickness in the range from 0.7 μm to 1.7 μm by electrolytic plating is formed on the outermost surface.
申请公布号 US8915761(B2) 申请公布日期 2014.12.23
申请号 US201013321600 申请日期 2010.03.24
申请人 Yazaki Corporation 发明人 Kakuta Naoki
分类号 H01R4/18;H01R13/03;H01R4/62 主分类号 H01R4/18
代理机构 Sughrue Mion, PLLC 代理人 Sughrue Mion, PLLC
主权项 1. A connector terminal comprising: an electrical contact section that is brought into contact and conducted with a mating connector terminal by fitting to the mating connector terminal; and a conductor crimping section that is crimped to the conductor of an electric wire, wherein a metal material which constitutes the connector terminal has a base material based on an aluminum or an aluminum alloy, a Zn layer and a Cu layer are formed in sequence on a surface of the base material, and an Sn layer is formed on the outermost surface, wherein the Zn layer is formed by electroless plating, and the Cu layer and the Sn layer are formed by electrolytic plating, and wherein a thickness of the Zn layer is set to a range from 0.1 μm to 2.0 μm, a thickness of the Cu layer is set to a range from 0.5 μm to 1.0 μm, and a thickness of the Sn layer is set to a range from 0.7 μm to 1.7 μm.
地址 Tokyo JP